Electron g -factor of valley states in realistic silicon quantum dots

Disorder-induced valley-orbit hybrid states in Si quantum dots

Quantum dots in silicon are promising candidates for the implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these devices. Here we present a systematic effective mass theory of valley-orbit coupling in disordered silicon systems. This theory reveals valley-orbit hybridiza...

Optical and Electron Correlation Effects in Silicon Quantum Dots

We study (through computer simulation) the variation of the band gap as a function of sizes and shapes of small Silicon (Si) dots using pseudo-potential approach. We have used empirical pseudo-potential Hamiltonian and a plane wave basis expansion and a basic tetrahedral structure. It is found that the gap decreases for increasing dot size. Furthermore, the band gap increases as much as 0.13eV ...

Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots

We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the...

Forming delocalized intermediate states with realistic quantum dots

Optical control over electron g factor and spin decoherence in (In, Ga)As/GaAs quantum dots

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